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2SK1579 MOSFET N-Channel 12V 2A SOT-89 marking DY High speed power switching/low on-resistance/fast switch/low voltage operating
最大源漏极电压Vds Drain-Source Voltage | 12V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 7V |
最大漏极电流Id Drain Current | 2A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.25Ω/Ohm @1A,4V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.4-1.4V |
耗散功率Pd Power Dissipation | 1W |
Description & Applications | Silicon N Channel MOS FET High speed power switching Features High speed power switching Low on-resistance High speed switching Suitable for low voltage operation |
描述与应用 | 硅N沟道MOS FET 高速功率开关 特性 高速功率开关 低导通电阻 高速开关 适用于低电压操作 |