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2SK1697EY MOSFET N-Channel 60V 500mA/0.5A SOT-89 marking EY FETHigh speed power switching/low on-resistance/fast switch/Low drive current

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current500mA/0.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance1.3Ω/Ohm @300mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2V
耗散功率Pd Power Dissipation1W
Description & ApplicationsSilicon N-Channel MOS FET High speed power switching application Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive
描述与应用硅N沟道MOS FET 高速功率开关应用 低导通电阻 高速开关 低驱动电流 4 V栅极驱动装置---可从5 V源驱动。 适用于DC - DC转换器,马达驱动器,电源开关,电磁驱动器
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