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2SK18600S2MC JFET N-Channel 20v 0.095~0.48mA SOT-23 marking 1H S low frequency impedance conversion

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.095~0.48ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-2~-5v
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & Applications•Silicon N-Channel Junction FET •For impedance conversion in low frequency For electret capacitor microphone Features • High mutual conductance gm • Low noise voltage of NV
描述与应用•硅N沟道结型场效应管 •对于低频阻抗转换中 对于驻极体电容式麦克风 特点 •高互导GM •低噪声电压的NV
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