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2SK2925STR MOSFET N-Channel 60V 10A TO-252/D-PAK marking K2925 high-speed power switch/low on-resistance/4V gate driver

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current10A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.06Ω/Ohm @5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.5-2.5V
耗散功率Pd Power Dissipation20W
Description & ApplicationsFeatures Silicon N Channel MOS FET High Speed Power Switching Low on-resistance RDS=0.060 Ω typ. 4V gate drive device can be driven from 5V source
描述与应用特性 硅N沟道MOS FET 高速电源开关 低导通电阻 RDS=0.060Ω典型。 4V栅极驱动器可以驱动自5V电源
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