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2SK3225(1)-Z-E1 MOSFET N-Channel 60V 34A TO-252/D-PAK marking K3225 low on-resistance/high-speed switch

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current34A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.013Ω/Ohm @17A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2V
耗散功率Pd Power Dissipation2W
Description & ApplicationsSilicon N Channel MOS FET High Speed Power Switching Features Silicon N Channel MOS FET High Speed Power Switching Low on-resistance RDS = 40 mΩ typ High speed switching 4 V gate drive device can be driven from 5 V source
描述与应用硅N沟道MOS FET 高速电源开关 特性 硅N沟道MOS FET 高速电源开关 低导通电阻 RDS=40MΩ(典型值) 高速开关 4 V栅极驱动器可驱动从5 V电源
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