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2SK3230B JFET N-Channel 20v 0.15~0.24mA SOT-523 marking CF radio and telephone

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.15~0.24ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.37~-1v
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & Applications•N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FEATURES • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone • Small package: SC-89 (TUSM)
描述与应用•N沟道硅结型场效应晶体管 特点 •低噪音: -108.5 dB(典型值)。 (VDD= 2.0 V,C= 5 pF的,RL=2.2kΩ上) •特别适用于音频和电话 •小型封装:  SC89(TUSM)
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