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2SK611-Z-T1 MOSFET N-Channel 30V 1A TO-252/D-PAK marking K611 no secondary breakdown/4 V gate drive-logical level

Model：2SK611-Z-T1
Mark / screen / code / typing：K611
Manufacturer：
Date Code：05+ 05+
Package：TO-252/D-PAK
Standard Package：2000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.003Ω/Ohm @500mA,10V
开启电压Vgs（th） Gate-Source Threshold Voltage	0.8-3.0V
耗散功率Pd Power Dissipation	10W
Description & Applications	N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING Features Fast switching Silicon N-Channel POWER MOS FET Industrial use Suitable for switching power supplies，actuator controls，and pulse circuits Low Ciss No second breakdown 4 V gate drive-logical level
描述与应用	用于高速开关的N沟道MOSFET 特性快速开关硅N沟道功率MOS FET 工业用适用于开关电源，执行器控制装置和脉冲电路低Ciss 无二次击穿 4栅极驱动电压逻辑电平

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