2SK739-Z-T1 MOSFET N-Channel 30V 2A TO-252/D-PAK marking K739 no secondary breakdown|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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2SK739-Z-T1 MOSFET N-Channel 30V 2A TO-252/D-PAK marking K739 no secondary breakdown

Model：2SK739-Z-T1
Mark / screen / code / typing：K739
Manufacturer：
Date Code：05+
Package：TO-252/D-PAK
Standard Package：1500
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.17Ω/Ohm @1A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage	1-2.5V
耗散功率Pd Power Dissipation	2W
Description & Applications	FAST SWITCHING Features Fast switching Silicon N-Channel POWER MOS FET Industrial use Suitable for switching power supplies，actuator controls，and pulse circuits Low Ciss No second breakdown 4 V gate drive-logical level Designed for hybrid integrated circuit
描述与应用	快速切换特性快速开关硅N沟道功率MOS FET 工业用适用于开关电源，执行器控制装置和脉冲电路 Ciss低无二次击穿 4栅极驱动电压逻辑电平专为混合集成电路

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