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3SK230 MOSFET N-Channel 18V 25mA SOT-143 marking U1B low noise gain control amplifier/enhancement mode
| 最大源漏极电压Vds Drain-Source Voltage | 18V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 25mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0-1.0/0.6-1.6 |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD Features TheCharacteristic of Cross-Modulation is good. CM = 108 dBµ (TYP.) @f = 470 MHz, GR = −30 dB •Low Noise Figure NF1 = 2.2 dB TYP.(@ = 470 MHz) NF2 = 0.9 dB TYP. (@ = 55 MHz) •High Power Gain GPS = 19.5 dB TYP. (@ = 470 MHz) •Enhancement Typ. •Suitable for use as RF amplifier in CATV tuner. •Automatically Mounting: Embossed Type Taping •Small Package: 4 Pins Mini Mold Package. (SC-61) |
| 描述与应用 | MOS场效应晶体管 射频放大器。对于VHF/ CATV调谐器 N-沟道硅双栅MOS场效应晶体管 4引脚MINI模具 交叉调制特性好。 CM =108dBμ（典型值）@ F =470兆赫，GR=-30分贝 •低噪声系数NF1=2.2 dB（典型值）（@= 470兆赫） NF2=0.9 dB典型值。 （@= 55兆赫） •高功率增益GPS=19.5 dB典型值。 （@=470兆赫） •增强典型。 •适合用作RF放大器CATV调谐器。 •自动安装：压花类型大坪 •小包装：4针迷你模具包装 |
