3SK284 MESFET-N channel -6V 4mA-16mA -0.5V -- -1.5V SOT-343 marking U1 RF application|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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3SK284 MESFET-N channel -6V 4mA-16mA -0.5V -- -1.5V SOT-343 marking U1 RF application

Model：3SK284
Mark / screen / code / typing：U1
Manufacturer：
Date Code：05+
Package：SOT-343
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-6V
栅源极击穿电压V(BR)GS Gate-Source Voltage	-4V
漏极电流(Vgs=0V)IDSS Drain Current	4mA-16mA
关断电压Vgs(off) Gate-Source Cut-off Voltage	-0.5V -- -1.5V
耗散功率Pd Power Dissipation	100mW/0.1W
Description & Applications	TOSHIBA FIELD EFFECT TRANSISTER .GaAs N-channel Dual Gate MES FET .Applications: TV TUNER,UHF RF AMPLIFIER APPLICATIONS.
描述与应用	东芝场效应型晶体管. 砷化镓N沟道双栅MES FET. 应用: 电视调谐器，超高频 RF放大器.

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