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APM2306AC MOSFET N-Channel 30V 3.5A SOT-23/SC-59 marking 2306 high density battery design/high power and current handling capability

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current3.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.065Ω/Ohm 3.5A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage1.5V
耗散功率Pd Power Dissipation1.25W
Description & ApplicationsN-Channel Enhancement Mode MOSFET •Switching Regulators •Switching Converters 30V/3.5A RDS(ON)=70mΩ(typ.) @ VGS=5V RDS(ON)=42mΩ(typ.) @ VGS=10 Super High Dense Cell Design High Power and Current Handling Capability SOT-23 Package
描述与应用N沟道增强型MOSFET •开关稳压器 •开关变换器 RDS(ON)=70mΩ的(典型值)@ VGS=5V RDS(ON)=42mΩ(典型值)@ VGS=10 超级高密度电池设计 高功率和电流处理能力 SOT-23封装
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