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AT-31033 NPN Transistors(BJT) 11V 16mA 5GHz 70~300 1V SOT-23/SC-59 marking 310

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
11V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
5.5V
集电极连续输出电流IC
Collector Current(IC)
16mA
截止频率fT
Transtion Frequency(fT)
5GHz
直流电流增益hFE
DC Current Gain(hFE)
70~300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
1V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsLow Current, High Performance NPN Silicon Bipolar Transistor Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011: 0.9 dB NF, 13 dB GA AT-31033: 0.9 dB NF, 11 dB GA • Characterized for End-OfLife Battery Use (2.7 V) • SOT-143 SMT Plastic Package • Tape-And-Reel Packaging Option Available
描述与应用低电流,高性能 NPN硅双极晶体管 特点 •高性能双极晶体管低电流,低电压操作而优化 •900兆赫绩效: AT-31011:0.9分贝,13分贝(NF)GA AT-31033:0.9分贝,11分贝(NF)GA •其特点为的最终OfLife电池使用(2.7 V) •采用SOT-143封装的SMT塑料包装 •磁带和卷轴包装选项可用
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