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BF1005R MOSFET N-Channel 8V 25mA SOT-143 marking MZ integrated biasing network

Model：BF1005R
Mark / screen / code / typing：MZ
Manufacturer：
Date Code：05+
Package：SOT-143
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	8V
最大栅源极电压Vgs(±) Gate-Source Voltage	3V
最大漏极电流Id Drain Current	25mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs（th） Gate-Source Threshold Voltage	8-12/8-13V
耗散功率Pd Power Dissipation	200mW/0.2W
Description & Applications	Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network
描述与应用	硅N沟道MOSFET四极管 •低噪声，高增益控制高达1 GHz的输入级 •工作电压5V •集成偏置网络

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