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BFQ149 PNP transistors(BJT) -20V -100mA/-0.1A 5GHz 50 SOT-89/SC-62 marking FG high output voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−15V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
5GHz
直流电流增益hFE
DC Current Gain(hFE)
50
管压降VCE(sat)
Collector-Emitter SaturationVoltage
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsPNP 5 GHz wideband transistor FEATURES • High output voltage capability • High gain bandwidth product • Good thermal stability • Gold metallization ensures excellent reliability
描述与应用PNP5 GHz的宽带晶体管 特点 •高输出电压能力 •高增益带宽积 •良好的热稳定性 •黄金金属确保卓越的可靠性
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