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BFS17AW NPN Transistors(BJT) 25V 25mA 3.5Ghz 20~150 600mV/0.6V SOT-323/SC-70 marking E1 wideband,low noise,small signal amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
15V
集电极连续输出电流IC
Collector Current(IC)
25mA
截止频率fT
Transtion Frequency(fT)
3.5Ghz
直流电流增益hFE
DC Current Gain(hFE)
20~150
管压降VCE(sat)
Collector-Emitter Saturation Voltage
600mV/0.6V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsNPN Silicon Planar RF Transistor Applications Wide band, low noise, small signal amplifiers up to UHF frquencies, high speed logic applications and oscillator applications. Features Low noise figure High power gain Small collector capacitance
描述与应用NPN硅平面RF晶体管 应用 宽带,低噪声,小信号放大器 的UHF frquencies,高速逻辑应用和振荡器的应用。 特点 低噪声系数 高功率增益 小集电极电容
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