Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
CMPT3019TR NPN Transistors(BJT) 120V 500mA/0.5A 100MHz 100~300 500mV/0.5V SOT-23/SC-59 marking C3A general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 350mW/0.35W |
| Description & Applications | NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applications. |
| 描述与应用 | NPN硅晶体管 中央的半导体CMPT3019类型是NPN硅晶体管 由外延平面工艺制造，环氧树脂模压在一个表面贴装封装，非常高的电流，通用放大器应用设计的。 |
