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CPH6302 P MOSFET -30V -3A SOT-163/SOT23-6/CPH6 marking JB ultra high-speed switch 4V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-3A
源漏极导通电阻Rds
Drain-Source On-State Resistance
270mΩ@ VGS = -4V, ID = -0.5A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1~-2.5V
耗散功率Pd
Power Dissipation
1.6W
Description & Applications P-Channel MOS Silicon FET Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive
描述与应用 P沟道MOS硅FET 超高速开关应用 特点  ·低导通电阻。  ·超高速开关。  ·4V驱动器
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