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CXT5551 NPN Transistors(BJT) 180V 600mA/0.6a 100~300MHz 80~250 200mV/0.2V SOT-89 marking CXT5551 high voltage amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)		180V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)		160V
集电极连续输出电流IC
Collector Current(IC)		600mA/0.6A
截止频率fT
Transtion Frequency(fT)		100~300MHz
直流电流增益hFE
DC Current Gain(hFE)		80~250
管压降VCE（sat）
Collector-Emitter Saturation Voltage		200mV/0.2V
耗散功率Pc
Power Dissipation		1.2W
Description & ApplicationsSURFACE MOUNT NPN SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
描述与应用表面贴装 NPN硅晶体管 中央半导体CXT5551型硅NPN晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，高电压放大器应用设计制造。
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