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DTC114EE NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 10k 10k sot-523/EMT3 marking 24

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)30
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeatures Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Lead Free/RoHS Compliant
描述与应用特性 外延平面电路小片构建 互补PNP类型可用(DDTA) 内置偏置电阻R1= R2 无铅/ 符合RoHS标准
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