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EMB9 PNP+PNP Complex Bipolar Digital Transistor -50V -0.1A 0.15W R1=10KΩ R2=47KΩ SOT563 marking B9 switching inverting interface driver circuit

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Product description

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC)  -100MA
 Input Resistance(R1)  10KΩ
Base-Emitter Resistance(R2)  47KΩ
Base-Emitter Input Resistance Ratio (R1/R2) 4.7
DC Current Gain(hFE)  
Transtion Frequency(fT)  250MHZ
Power Dissipation (Pd) 150MW
Description & Applications  General purpose(dual digital transistors)
Two DTA144Ys in a EMT or UMT or SMT package.
Technical Documentation Download Read Online

 

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