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EMD9 Complex Bipolar Digital Transistor 50V 0.1A 0.15W SOT-563/EMT6 marking D9 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | -50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | -50V/50V |
| Collector Current(IC) Q1/Q2 | -100mA/100mA |
| Q1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| (R1/R2) Q1 Resistance Ratio | 0.21 |
| Q2 Input Resistance(R1) | 10KΩ/Ohm |
| Q2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| (R1/R2) Q2 Resistance Ratio | 0.21 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 250MHz |
| Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | Features •DTA114Y and DTC114Y transistors are built-in a EMT or UMT or SMT package •(Dual Digital Transistors for Inverter Drive) |
| 描述与应用 | 特点 •DTA114Y和DTC114Y晶体管内置在EMT或UMT或SMT封装 •（逆变器驱动的双数字晶体管） |
