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EMG3 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA HEF=100~600 R1=4.7KΩ 150mW/0.15W SOT-553/EMT5 marking G3 switching inverting interface driver circuit

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Product description
Collector-Base Voltage(VCBO) Q1/Q2 50V/50V
Collector-Emitter Voltage(VCEO) Q1/Q2 50V/50V
Collector Current(IC) Q1/Q2 100mA/100MA
Q1 Input Resistance(R1) 4.7KΩ/Ohm
Q1Base-Emitter Resistance(R2)  
Q1(R1/R2) Q1 Resistance Ratio  
Q2 Input Resistance(R1) 4.7KΩ/Ohm
Q2Base-Emitter Resistance(R2)  
Q2(R1/R2) Q2 Resistance Ratio  
 DC Current Gain(hFE) Q1/Q2 100~600/100~600
Transtion Frequency(fT) Q1/Q2 250MHz/250MHZ
 Power Dissipation Q1/Q2 150mW/0.15W
Description & Applications Features •Emitter common (dual digital transistors) •Two DTC143T chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half
描述与应用 特点 •发射极普通的(双数字晶体管) •两个DTC143T在EMT或UMT或SMT封装的芯片。 •安装成本和面积可减少一半
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