EMG9 NPN+NPN Complex Bipolar Digital Transistor 50V 0.1A 0.15W SOT-563/EMT6 marking G9 switching inverting interface driver circuit|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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EMG9 NPN+NPN Complex Bipolar Digital Transistor 50V 0.1A 0.15W SOT-563/EMT6 marking G9 switching inverting interface driver circuit

Model：EMG9
Mark / screen / code / typing：G9
Manufacturer：
Date Code：05+nopb 05+NOPB7908
Package：SOT-563/EMT6
Standard Package：8000
Min Order：100

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Product description

Collector-Base Voltage(VCBO) Q1/Q2	50V/50V
Collector-Emitter Voltage(VCEO)Q1/Q2	50V/50V
Collector Current(IC) Q1/Q2	10MA/100MA
Q1 Input Resistance(R1)	10KΩ/Ohm
Q1Base-Emitter Resistance(R2)	10KΩ/Ohm
Q1(R1/R2) Q1 Resistance Ratio	1
Q2 Input Resistance(R1)	10KΩ/Ohm
Q2 Base-Emitter Resistance(R2)	10KΩ/Ohm
Q2(R1/R2) Q2 Resistance Ratio	1
DC Current Gain(hFE) Q1/Q2
Transtion Frequency(fT) Q1/Q2	250MHz/250MHZ
Power Dissipation Q1/Q2	150mW/0.15W
Description & Applications	Features •Emitter common (dual digital transistors) •Two DTC114E chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half
描述与应用	Features •Emitter common (dual digital transistors) •Two DTC114E chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half

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