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EMH25 NPN+NPN Complex Bipolar Digital Transistor 30V 100mA 150mW/0.15W SOT-563/EMT6 marking H25 switching inverting interface driver circuit

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Product description
Collector-Base Voltage(VCBO) Q1/Q2 50V/50V
Collector-Emitter Voltage(VCEO) Q1/Q2 50V/50V
Collector Current(IC) Q1/Q2 100mA/100MA
Q1 Input Resistance(R1) 4.7KΩ/Ohm
Q1Base-Emitter Resistance(R2) 47KΩ/Ohm
Q1(R1/R2) Q1 Resistance Ratio 0.1
Q2 Input Resistance(R1) 4.7KΩ/Ohm
Q2Base-Emitter Resistance(R2) 47KΩ/Ohm
Q2(R1/R2) Q2 Resistance Ratio 0.1
 DC Current Gain(hFE)  
Transtion Frequency(fT) Q1/Q2 250MHz/250MHZ
 Power Dissipation Q1/Q2 150mW/0.15W
Description & Applications Features •General purpose (dual digital transistors) •Two DTC143Z chips in a EMT package. •Mounting possible with EMT automatic mounting machines. •Transistor elements are independent, eliminating interference. •Mounting cost and area can be cut in half.
描述与应用 特点 •通用(双数字晶体管) •的两个DTC143Z芯片在EMT包。 •安装可能与EMT自动安装机器。 •晶体管元素是独立的,消除干扰。 •安装成本和面积可减少一半
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