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EMH6 NPN+NPN Complex Bipolar Digital Transistor 50V 0.1A 150mW/0.15W SOT-563/EMT6 marking H6 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO)Q1/Q2 | 50V/50V |
| Collector-Emitter Voltage(VCEO)Q1/Q2 | 50V/50V |
| Collector Current(IC)Q1/Q2 | 100MA/100MA |
| Q1基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 |
| DC Current Gain(hFE)Q1/Q2 | |
| Transtion Frequency(fT)Q1/Q2 | 250MHz/250MHZ |
| Power DissipationQ1/Q2 | 150mW/0.15W |
| Description & Applications | Features •General purpose (dual digital transistors) •Two DTC144E chips in a EMT or UMT or SMT package. |
| 描述与应用 | 特点 •通用（双数字晶体管） •两个DTC144E的在EMT或UMT或SMT封装的芯片 |
