EMH6 NPN+NPN Complex Bipolar Digital Transistor 50V 0.1A 150mW/0.15W SOT-563/EMT6 marking H6 switching inverting interface driver circuit|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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EMH6 NPN+NPN Complex Bipolar Digital Transistor 50V 0.1A 150mW/0.15W SOT-563/EMT6 marking H6 switching inverting interface driver circuit

Model：EMH6
Mark / screen / code / typing：H6
Manufacturer：
Date Code：05+ 05+
Package：SOT-563/EMT6
Standard Package：8000
Min Order：100

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Product description

Collector-Base Voltage(VCBO)Q1/Q2	50V/50V
Collector-Emitter Voltage(VCEO)Q1/Q2	50V/50V
Collector Current(IC)Q1/Q2	100MA/100MA
Q1基极输入电阻R1 Input Resistance(R1)	47KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)	47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio	1
Q2基极输入电阻R1 Input Resistance(R1)	47KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)	47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio	1
DC Current Gain(hFE)Q1/Q2
Transtion Frequency(fT)Q1/Q2	250MHz/250MHZ
Power DissipationQ1/Q2	150mW/0.15W
Description & Applications	Features •General purpose (dual digital transistors) •Two DTC144E chips in a EMT or UMT or SMT package.
描述与应用	特点 •通用（双数字晶体管） •两个DTC144E的在EMT或UMT或SMT封装的芯片

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