EMG8 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 150mW/0.15W R1=4.7KΩ R2=47KΩ SOT-553/EMT5 marking G8 switching inverting interface driver circuit|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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EMG8 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 150mW/0.15W R1=4.7KΩ R2=47KΩ SOT-553/EMT5 marking G8 switching inverting interface driver circuit

Model：EMG8
Mark / screen / code / typing：G8
Manufacturer：
Date Code：05+ 05+06NOPB7800
Package：SOT-553/EMT5
Standard Package：8000
Min Order：100

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Product description

Collector-Base Voltage(VCBO) Q1/Q2	50V/50V
Collector-Emitter Voltage(VCEO) Q1/Q2	50V/50V
Collector Current(IC) Q1/Q2	100mA/100MA
Q1 Input Resistance(R1)	4.7KΩ/Ohm
Q1Base-Emitter Resistance(R2)	47KΩ/Ohm
Q1(R1/R2) Q1 Resistance Ratio	0.1
Q2 Input Resistance(R1)	4.7KΩ/Ohm
Q2Base-Emitter Resistance(R2)	47KΩ/Ohm
Q2(R1/R2) Q2 Resistance Ratio	0.1
DC Current Gain(hFE) Q1/Q2
Transtion Frequency(fT) Q1/Q2	250MHz
Power Dissipation Q1/Q2	150mW/0.15W
Description & Applications	Features •Emitter common (dual digital transistors) •Two DTC143Z chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half
描述与应用	Features •Emitter common (dual digital transistors) •Two DTC143Z chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half

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