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EMG6 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA HEF=100~600 R1=47KΩ 150mW/0.15W SOT-553/EMT5 marking G6 switching inverting interface driver circuit

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Product description
Collector-Base Voltage(VCBO) Q1/Q2 50V/50V
Collector-Emitter Voltage(VCEO) Q1/Q2 50V/50V
Collector Current(IC) Q1/Q2 100mA/100MA
Q1 Input Resistance(R1) 47KΩ/Ohm
Q1 Base-Emitter Resistance(R2)  
Q1(R1/R2) Q1 Resistance Ratio  
Q2 Input Resistance(R1) 47KΩ/Ohm
Q2 Base-Emitter Resistance(R2)  
Q2(R1/R2) Q2 Resistance Ratio  
 DC Current Gain(hFE) Q1/Q2 100~600/100~600
 Transtion Frequency(fT) 250MHz/250MHZ
Power Dissipation Q1/Q2 150mW/0.15W
Description & Applications Features •Emitter common (dual digital transistors) •Two DTC114T chips in a EMT or UMT or SMT package.
描述与应用 特点 •发射极普通的(双数字晶体管) •两个DTC114T的在EMT或UMT或SMT封装的芯片
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