My order
Share to:  
Location：Home > Stock Inventory > Product Details

FDC638P MOSFET P-Channel -20V -2.8A 0.11ohm SOT-163 marking 638

Hot selling goods

Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-2.8A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.11Ω @-2.8A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.4--1V
耗散功率Pd
Power Dissipation		1.6W
Description & ApplicationsTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
描述与应用TM-6包装设计采用铜引线框架的 卓越的热性能和电气性能。 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力
List of related models

Record / license number：粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00