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FDN338P MOSFET P-Channel -20V -1.6A 0.115ohm SOT-23 marking 338
最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
最大漏极电流Id Drain Current | -1.6A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.115Ω @-1.6A,-4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.4--1.0V |
耗散功率Pd Power Dissipation | 500mW/0.5W |
Description & Applications | Industry standard outline SOT-23 surface mount package using proprietary SuperSOT TM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability |
描述与应用 | 行业标准外形SOT-23表面贴装 包装使用专有SuperSOT TM-3设计 卓越的热性能和电气性能。 高密度电池设计极低的RDS(ON) 卓越的导通电阻和最大DC电流能力 |