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FDN358P MOSFET P-Channel -30V -1.5A 0.11ohm SOT-23 marking 358
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -1.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.11Ω @-1.5A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1--2V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability. High density cell design for extremely low RDS(ON) .Exceptional on-resistance and maximum DC current capability. |
| 描述与应用 | 行业SOT-23封装的高功率版相同 引脚SOT-23;30％更高的功率处理能力。 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力 |
