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FDT434P MOSFET P-Channel -20V -6A 0.040ohm SOT-223 marking D434AF
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -6A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.040Ω @-6A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4--1V |
| 耗散功率Pd Power Dissipation | 3W |
| Description & Applications | • Low gate charge (5nC typical). • Fast switching speed. •High performance trench technology for extremely low RDS(ON) • High power and current handling capability. |
| 描述与应用 | •低栅极电荷（典型5NC）。 •快速开关速度。 •高性能沟道技术极 低RDS（ON） •高功率和电流处理能力 |
