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FZT955TA PNP transistors(BJT) -180V -4A 110MHz 100~300 -370mV/-0.37V SOT-223 marking FZT955 high current/low saturation voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-180V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-140V
集电极连续输出电流IC
Collector Current(IC)
-4A
截止频率fT
Transtion Frequency(fT)
110MHz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-370mV/-0.37V
耗散功率Pc
PoWer Dissipation
3W
Description & ApplicationsPNP SILICON PLANAR HIGH CURRENT TRANSISTORS FEATURES 4 Amps continuous current , up to 15 Amps peak current Very low saturation voltages Excellent gain characteristics specified up to 10 Amps COMPLEMENTARY TYPES FZT855
描述与应用PNP硅平面高电流晶体管 特点 4安培连续电流高达15安培的峰值电流 极低的饱和电压 出色的增益特性可达10安培 互补类型FZT855
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