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HAT1063M MOSFET P-Channel SOT-163 marking 1063 high frequency bipolar transistors small package

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Product description
最大源漏极电压Vds
Drain-Source Voltage
最大栅源极电压Vgs(±)
Gate-Source Voltage
最大漏极电流Id
Drain Current
源漏极导通电阻Rds
Drain-Source On-State
Resistance
开启电压Vgs(th)
Gate-Source Threshold Voltage
耗散功率Pd
Power Dissipation
Description & Applicationshitachi high frequency bipolar transistors Excellent C/N characteristics small package excellent temperature
描述与应用日立高频双极晶体管 优秀的C/ N特性 小包装 优良的温度
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