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HN1C03FU-B NPN+NPN Complex Bipolar Transistor 50V 0.3A HEF=350~1200 SOT-163/SM6/SOT-26 marking C3B switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

  50V

V(BR) CEO

Collector-Emitter Voltage

  20V
Collector Current(IC)  300MA
Transtion Frequency(fT)  30MHZ
DC Current Gain(hFE)  350~1200

VCE (sat)

Collector-Emitter Saturation Voltage

  0.1V
Power Dissipation （Pd）  200MW/0.2W
Description & Applications  Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) • Including two devices in SM6 (Super mini type with 6 leads) • High emitter-base voltage: VEBO = 25V (min) • High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA) • Low on resistance: RON = 1Ω (typ.)(IB = 5mA) • For Muting And Switching Applications
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