My order
Share to:  
Location:Home > Stock Inventory > Product Details

HN2E01F-B Complex Bipolar Transistor+doides 150mA 80V SOT-163/SM6/SOT-26 marking 12B

Hot selling goods

Product description
三极管BJT类型 TYPE NPN 2SC4666
三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 50V
三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V
三极管BJT集电极连续输出电流IC Collector Current(IC) 150mA
三极管BJT截止频率fT Transtion Frequency(fT) 250MHz
三极管BJT直流电流增益hFE DC Current Gain(hFE) 600~3600
三极管BJT管压降VCE(sat) Collector-Emitter Saturation Voltage 0.12~0.25V
二极管DIODE类型 TYPE 高速开关二极管 High Speed Switching 1SS352
二极管DIODE反向电压VR Reverse Voltage 80V
二极管DIODE正向整流电流Io Rectified Current 100mA
二极管DIODE正向电压降VF Forward Voltage(Vf) 980mV~1.2V
耗散功率Pc Power Dissipation 300mW
Description & Applications Features • TOSHIBA MULTI CHIP DISCRETE DEVICE • Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Q1 • Low Forward Voltage Drop : VF(3)=0.98V(typ.) • Fast Reverse Recovery Time : trr=1.6ns(typ.) • Low Total Capacitance : CT=0.5pF(typ.) Q2 • High DC Current Gain : hFE=600~3600 • High Voltage : VCEO=50V • High Collector Current : IC=150mA(max.) • Q1 (Diode) : 1SS352 Equivalent • Q2 (Transistor) : 2SC4666 Equivalent
描述与应用 特点 •东芝多芯片分立器件 •超高速开关应用音频放大器应用通用开关应用 Q1 •低正向压降VF(3)=0.98V(典型值) •快速反向恢复时间:TRR =1.6ns(典型值) •低总电容CT值为0.5pF(典型值) Q2 •高DC电流增益:HFE=600〜3600 •高电压:VCEO= 50V •高集电极电流IC=电流150mA(最大) •Q1:1SS352当量(二极管) •Q2(晶体管):相当于2SC4666
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00