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HN3G01J-GR FET+BJTComplex FET 20V 60V marking ZG SOT-153 RF amplifier

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Product description
最大源漏极电压Vds
Drain-Source Voltage
JFET N-Channel
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-20V
源漏极导通电阻Rds
Drain-Source On-State Resistance
开启电压Vgs(th)
Gate-Source Threshold Voltage
耗散功率Pd
Power Dissipation
25ms@VDS=5V,VGS=0V,f=kHz
Description & Applications6mA~12mA
描述与应用-2.5V
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