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IRF6617TR1 MOSFET N-Channel 20V 9.4A MT marking low gate chargefast switch/very low RDS

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current9.4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance6.3Ω/Ohm @15A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.3-2.0V
耗散功率Pd Power Dissipation3.6W
Description & ApplicationsHEXFETPower MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
描述与应用HEXFET功率MOSFET 特殊应用的MOSFET 非常适于CPU核心的DC-DC转换器 低传导损耗 高CDV/ dt抗扰性 薄型(<0.7毫米) 双面冷却双兼容 与现有的表面兼容 安装技术
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