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IRLML6401TR MOSFET P-Channel -430mA 0.050ohm SOT-23 marking F1/F3/F4/F5/F6/FB/FE ultra low on-resistance low profile

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Product description
最大源漏极电压Vds
Drain-Source Voltage
最大栅源极电压Vgs(±)
Gate-Source Voltage		-12V
最大漏极电流Id
Drain Current		-430mA/-0.43A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.050Ω @-4.3A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.40--0.95V
耗散功率Pd
Power Dissipation		1.3W
Description & ApplicationsUltra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel
描述与应用超低导通电阻 P沟道MOSFET SOT-23的脚印 薄型（高度<1.1mm） 可在磁带和卷轴
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