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KRC655E NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 200mW/0.2W SOT-353/usv/SC70-5 marking NE switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA
Q1基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio0.047
Q2基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio0.047
直流电流增益hFE DC Current Gain(hFE)
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation200mW/0.2W
Description & ApplicationsFeatures •EPITAXIAL PLANAR PNP TRANSISTOR •INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. •With Built-in Bias Resistors. •Simplify Circuit Design. •Reduce a Quantity of Parts and Manufacturing Process. •High Packing Density
描述与应用特点 •外延平面PNP晶体管 •接口电路和驱动器电路中的应用。 •内置偏置电阻器。 •简化电路设计。 •减少了部件数量和制造工艺。 •高密度封装
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