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KRX101E NPN+PNP Complex Bipolar Digital Transistor 50V 100mA 0.2W R1=10KΩ R2=10KΩ 200MHZ SOT-553/TESV marking BA switching inverting interface driver circuit
| Q1 Collector-Base Voltage(VCBO) | 50V |
| Q1Collector-Emitter Voltage(VCEO) | 50V |
| Q1 Collector Current(IC) | 100MA |
| Q2 Collector-Base Voltage(VCBO) | -50V |
| Q2Collector-Emitter Voltage(VCEO) | -50V |
| Q2Collector Current(IC) | -100MA |
| Q1 Input Resistance(R1) | 10KΩ |
| Q1Base-Emitter Resistance(R2) | 10KΩ |
| Q1(R1/R2) Q1 Resistance Ratio | 1 |
| Q2 Input Resistance(R1) | 10KΩ |
| Q2Base-Emitter Resistance(R2) | 10KΩ |
| Q2(R1/R2) Q2 Resistance Ratio | 1 |
| DC Current Gain(hFE) Q1/Q2 | |
| Transtion Frequency(fT) Q1/Q2 | 200MHZ/200MHZ |
| Power Dissipation | 0.2W |
| Description & Applications |
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
* Including two devices in TESV.
(Thin Extereme Super mini type with 5 pin.)
* With Built-in bias resistors.
* Simplify circuit design.
* Reduce a quantity of parts and manufacturing process.
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