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KTD1003-B NPN Transistors(BJT) 60V 1A 150MHz~250MHz 800~3200 170mV~300mV SOT-89 marking LB high current application

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
150MHz~250MHz
直流电流增益hFE
DC Current Gain(hFE)
800~3200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
170mV~300mV
耗散功率Pc
Power Dissipation
Description & ApplicationsHIGH CURRENT APPLICATION. hight DC current gain:hfe=800~3200 wide area of safe operation low collector saturation voltage
描述与应用高电流应用。 高度直流电流增益:HFE=800〜3200 安全工作区广 低集电极饱和度电压
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