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MCH5702-TL-E Complex Bipolar Transistor+doides 1.5A 30V SOT-353 marking PC

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Product description
三极管BJT类型 TYPENPN
三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)15V
三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)15V
三极管BJT集电极连续输出电流IC Collector Current(IC)1.5A
三极管BJT截止频率fT Transtion Frequency(fT)450MHz
三极管BJT直流电流增益hFE DC Current Gain(hFE)100mA
三极管BJT管压降VCE(sat) Collector-Emitter Saturation Voltage130~200mV
二极管DIODE类型 TYPE肖特基-单管 SBD-Single
二极管DIODE反向电压VR Reverse Voltage30V
二极管DIODE正向整流电流Io Rectified Current700mA
二极管DIODE正向电压降VF Forward Voltage(Vf)500mV
耗散功率Pc Power Dissipation700mW
Description & ApplicationsFeatures • TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode • DC/DC Converter Applications • Composite type with an NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. • The MCH5702 consists of two chips which are equivalent to the MCH6201 and the SBS006, respectively. • Ultrasmall package (0.85mm high when mounted) facilitates miniaturization in end products.
描述与应用特点 •TR:NPN平面外延硅晶体管  SBD:肖特基二极管 •DC / DC转换器应用 •复合型NPN晶体管和肖特基势垒二极管中包含一个包装促进高密度安装。 •的MCH5702由两个芯片,以的MCH6201及SBS006是等价的,分别。 •超小封装(0.85毫米高,安装时)有利于在终端产品的小型化。
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