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MCH6101 PNP+NPN Complex Bipolar Transistor -15V -1.5A 430MHZ HEF=200~560 SOT-363/MCPH6 marking AA switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) -15V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) -15V
集电极连续输出电流IC Collector Current(IC) -1.5A
截止频率fT Transtion Frequency(fT) 430MHz
直流电流增益hFE DC Current Gain(hFE) 200~560
管压降VCE(sat) Collector-Emitter Saturation Voltage  
耗散功率Pc Power Dissipation 1000mW
Description & Applications Features • PNP / NPN Epitaxial Planar Silicon Transistors • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, flash. • DC / DC Converter Applications
描述与应用 特点 •PNP/ NPN平面外延硅晶体管 •通过MBIT进程。 •高电流容量。 •低集电极 - 发射极饱和电压。 •高速开关。 •超小封装,有利于小型化的高端产品(安装高度:0.85毫米)。 •高允许功耗。 应用 •继电器驱动器,灯驱动器,电机驱动器,闪光灯。 •DC / DC转换器应用
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