Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
MGF1902B MESFET-N channel -6V 30mA-100mA -0.3V -- -3.5V GD-16 marking GJ RF application/low noise
最大源漏极电压Vds Drain-Source Voltage | -6V |
栅源极击穿电压V(BR)GS Gate-Source Voltage | -6V |
漏极电流(Vgs=0V)IDSS Drain Current | 30mA-100mA |
关断电压Vgs(off) Gate-Source Cut-off Voltage | -0.3V -- -3.5V |
耗散功率Pd Power Dissipation | 360mW/0.36W |
Description & Applications | Type carrier low noise GaAs FET S to X band low noise amplifiers and oscillators Low noise figure High associated gain |
描述与应用 | 载波低噪声砷化镓 场效应管类型 S到X波段低噪声放大器和振荡器 低噪声系数 高相关增益 |