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MMBT4403LT1 PNP transistors(BJT) -40V -600mA/- 0.6A 200MHz 100~300 -750mV/-0.75V SOT-23/SC-59 marking 2T
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC Collector Current(IC) | −600mA/- 0.6A |
截止频率fT Transtion Frequency(fT) | 200MHz |
直流电流增益hFE DC Current Gain(hFE) | 100~300 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -750mV/-0.75V |
耗散功率Pc PoWer Dissipation | 225mW/0.225W |
Description & Applications | Switching Transistor PNP Silicon Features • Pb−Free Package |
描述与应用 | PNP硅开关晶体管 特点 •无铅封装 |