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MMBT5551LT NPN Transistors(BJT) 180V 600mA/0.6a 20~250 150mV~250mV SOT-23/SC-59 marking G1 high voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
180V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
160V
集电极连续输出电流IC
Collector Current(IC)
600mA/0.6A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
20~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV~250mV
耗散功率Pc
Power Dissipation
225mW/0.225W
Description & ApplicationsHigh Voltage Transistors NPN Silicon • Pb−Free Packages are Available
描述与应用高电压晶体管 NPN硅 无铅包可用
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