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MRF1047T1 NPN Transistors(BJT) 12V 45mA 12Ghz 100~300 SOT-323/SC-70 marking WB low noise,RF

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
12V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
5V
集电极连续输出电流IC
Collector Current(IC)
45mA
截止频率fT
Transtion Frequency(fT)
12Ghz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
Description & Applications• NPN Silicon low noise, RF TRANSISTOR • Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA • High Current Gain–Bandwidth Product, fτ = 12 GHz, 3.0 V @ 15 mA • Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA • Output Third Order Intercept, OIP3 = 26 dBm @ 1.0 GHz 3.0 V and 15 mA • Fully Ion–Implanted with Gold Metallization and Nitride Passivation
描述与应用•NPN硅低噪声,射频晶体管 •低噪声系数的NFmin= 1.0分贝(典型值)的1.0 GHz,3.0 V和3.0 MA •高电流增益带宽积,Fτ =12 GHz时,3.0 V@15毫安 •最大稳定增益,17 dB@1.0主频,3.0 V和10毫安 •输出三阶截,OIP3=26 dBm@1.0 GHz的3.0 V和15毫安 •全镀金氮化硅钝化离子注入
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