MSB709-RT1G PNP transistors（BJT） -60V -100mA/-0.1A 210~340 -500mV/-0.5V SOT-23/SC-59 marking AR amplifier|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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MSB709-RT1G PNP transistors（BJT） -60V -100mA/-0.1A 210~340 -500mV/-0.5V SOT-23/SC-59 marking AR amplifier

Model：MSB709-RT1G
Mark / screen / code / typing：AR
Manufacturer：
Date Code：04+NOPB 06+ROHS
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	-60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	−45V
集电极连续输出电流IC Collector Current(IC)	−100mA/-0.1A
截止频率fT Transtion Frequency(fT)
直流电流增益hFE DC Current Gain(hFE)	210~340
管压降VCE（sat） Collector-Emitter SaturationVoltage	−500mV/-0.5V
耗散功率Pc PoWer Dissipation	200mW/0.2W
Description & Applications	PNP silicon general purpose amplifier Transistor Feature Pb−Free Package is Available
描述与应用	PNP硅通用晶体管放大器特点无铅包装是可用

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