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MTD3055VLT4 MOSFET N-Channel 30V 2A TO-252/D-PAK marking 305 fast switch/low on-resistance/low-voltage drive
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 15V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.040Ω/Ohm @10A,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.1V |
| 耗散功率Pd Power Dissipation | 7.4W |
| Description & Applications | Power MOSFET 12 Amps, 60 Volts N−Channel DPAK−3 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Packages are Available |
| 描述与应用 | 功率MOSFET 12安培，60伏特 N沟道DPAK-3 这种功率MOSFET的设计，可以承受高能量的 雪崩和减刑模式。专为低电压，高 高速开关应用在电源供应器，转换器和电源 马达控制，这些设备特别适合于桥 电路二极管的速度和换向安全工作领域 对意外的电压瞬变的关键，并提供额外的安全边际 •雪崩能量 •源漏二极管恢复时间等同于离散 快恢复二极管 •二极管的特点是桥电路中使用 •IDSS和VDS（上） 指定高温 •无铅包可用 |
