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NDC7003P Complex FET -60V -340mA/-0.34A SOT-163/SOT23-6/SSOT-6 marking 3 high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -20V |
| 最大漏极电流Id Drain Current | -340mA/-0.34A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 7.5Ω@ VGS = -4.8V, ID = -250mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1~-3.5V |
| 耗散功率Pd Power Dissipation | 960mW/0.96W |
| Description & Applications | Dual P-Channel Power Trench MOSFET General Description These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch. Features • Low gate charge • Fast switching speed • High performance trench technology for low RDS(ON) • SuperSOT-6 package |
| 描述与应用 | 双P沟道功率沟槽MOSFET 概述 这些双P沟道增强模式功率场效应晶体管都采用飞兆半导体专有的沟道技术。这非常高密度工艺已旨在最大限度地减少通态电阻，提供坚固可靠的性能和快速切换。本产品特别适合需要低电流高侧开关低电压应用。 特点 •低栅极电荷 •开关速度快 •高性能沟道技术的低RDS（ON） •SuperSOT-6封装 |
